complementary darlington power transistors dpak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? surface mount replacements for tip110tip117 series ? monolithic construction with builtin baseemitter shunt resistors ? high dc current gain e h fe = 2500 (typ) @ i c = 2.0 adc ? complementary pairs simplifies designs ??????????????????????? ??????????????????????? maximum ratings ????????????? ? ??????????? ? ????????????? rating ???? ? ?? ? ???? symbol ?????? ? ???? ? ?????? mjd112 mjd117 ??? ? ? ? ??? unit ????????????? collectoremitter voltage ???? v ceo ?????? 100 ??? vdc ????????????? ????????????? collectorbase voltage ???? ???? v cb ?????? ?????? 100 ??? ??? vdc ????????????? ????????????? emitterbase voltage ???? ???? v eb ?????? ?????? 5 ??? ??? vdc ????????????? ? ??????????? ? ????????????? collector current e continuous peak ???? ? ?? ? ???? i c ?????? ? ???? ? ?????? 2 4 ??? ? ? ? ??? adc ????????????? ????????????? base current ???? ???? i b ?????? ?????? 50 ??? ??? madc ????????????? ????????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? p d ?????? ?????? 20 0.16 ??? ??? watts w/ c ????????????? ? ??????????? ? ????????????? total power dissipation* @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????? ? ???? ? ?????? 1.75 0.014 ??? ? ? ? ??? watts w/ c ????????????? ????????????? operating and storage junction temperature range ???? ???? t j , t stg ?????? ?????? 65 to +150 ??? ??? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 4 1 publication order number: mjd112/d 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm mjd112 mjd117 case 369a13 silicon power transistors 2 amperes 100 volts 20 watts *on semiconductor preferred device case 36907 minimum pad sizes recommended for surface mounted applications * npn pnp *
mjd112 mjd117 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ???????? ???????? max ???? ???? unit ?????????????????? ?????????????????? thermal resistance, junction to case ?????? ?????? r q jc ???????? ???????? 6.25 ???? ???? c/w ?????????????????? ?????????????????? thermal resistance, junction to ambient* ?????? ?????? r q ja ???????? ???????? 71.4 ???? ???? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ????? ????? min ???? ???? max ???? ???? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????? ? ???????????????? ? ?????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) ?????? ? ???? ? ?????? v ceo(sus) ????? ? ??? ? ????? 100 ???? ? ?? ? ???? e ???? ? ?? ? ???? vdc ?????????????????? ?????????????????? collector cutoff current (v ce = 50 vdc, i b = 0) ?????? ?????? i ceo ????? ????? e ???? ???? 20 ???? ???? m adc ?????????????????? ? ???????????????? ? ?????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ?????? ? ???? ? ?????? i cbo ????? ? ??? ? ????? e ???? ? ?? ? ???? 20 ???? ? ?? ? ???? m adc ?????????????????? ? ???????????????? ? ?????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ?????? ? ???? ? ?????? i ebo ????? ? ??? ? ????? e ???? ? ?? ? ???? 2 ???? ? ?? ? ???? madc ?????????????????? ?????????????????? collectorcutoff current (v cb = 80 vdc, i e = 0) ?????? ?????? i cbo ????? ????? e ???? ???? 10 ???? ???? m adc ?????????????????? ?????????????????? emittercutoff current (v be = 5 vdc, i c = 0) ?????? ?????? i ebo ????? ????? e ???? ???? 2 ???? ???? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? dc current gain (i c = 0.5 adc, v ce = 3 vdc) (i c = 2 adc, v ce = 3 vdc) (i c = 4 adc, v ce = 3 vdc) ?????? ? ???? ? ? ???? ? ?????? h fe ????? ? ??? ? ? ??? ? ????? 500 1000 200 ???? ? ?? ? ? ?? ? ???? e 12,000 e ???? ? ?? ? ? ?? ? ???? e ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? collectoremitter saturation voltage (i c = 2 adc, i b = 8 madc) (i c = 4 adc, i b = 40 madc) ?????? ? ???? ? ? ???? ? ?????? v ce(sat) ????? ? ??? ? ? ??? ? ????? e e ???? ? ?? ? ? ?? ? ???? 2 3 ???? ? ?? ? ? ?? ? ???? vdc ?????????????????? ?????????????????? baseemitter saturation voltage (i c = 4 adc, i b = 40 madc) ?????? ?????? v be(sat) ????? ????? e ???? ???? 4 ???? ???? vdc ?????????????????? ?????????????????? baseemitter on voltage (i c = 2 adc, v ce = 3 vdc) ?????? ?????? v be(on) ????? ????? e ???? ???? 2.8 ???? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????? ? ???????????????? ? ?????????????????? currentgain e bandwidth product (i c = 0.75 adc, v ce = 10 vdc, f = 1 mhz) ?????? ? ???? ? ?????? f t ????? ? ??? ? ????? 25 ???? ? ?? ? ???? e ???? ? ?? ? ???? mhz ?????????????????? ? ???????????????? ? ?????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjd117 mjd112 ?????? ? ???? ? ?????? c ob ????? ? ??? ? ????? e e ???? ? ?? ? ???? 200 100 ???? ? ?? ? ???? pf (1) pulse test: pulse width 300 m s, duty cycle 2%. *these ratings are applicable when surface mounted on the minimum pad sizes recommended.
mjd112 mjd117 http://onsemi.com 3 0.04 0.2 4 0.1 0.06 0.6 1 4 i c , collector current (amp) v cc = 30 v i c /i b = 250 t, time (s) m 2 1 0.8 0.6 0.4 0.2 t s t f figure 1. switching times test circuit figure 2. switching times v 2 approx +8 v 0 8 k scope v cc -30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 m s t r , t f 10 ns duty cycle = 1% + 4 v t r t d @ v be(off) = 0 v pnp npn r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx -12 v tut r b d 1 60 0.4 2 i b1 = i b2 t j = 25 c figure 3. thermal response t, time or pulse width (ms) 1 0.01 1000 0.3 0.2 0.07 r(t), effective transient r q jc(t) = r(t) r q jc r q jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resistance (normalized) 0.7 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.05 0.1 0.01
mjd112 mjd117 http://onsemi.com 4 i c , collector current (amp) figure 4. maximum rated forward biased safe operating area figure 5. power derating 2 v ce , collector-emitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limited thermal limit second breakdown limit 520 3 t j = 150 c curves apply below rated v ceo 100 m s 1ms dc 0.1 1 3 7 10 10 730 25 25 t, temperature ( c) 0 50 75 100 125 15 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount t c 0.7 5ms 50 70 200 500 m s activeregion safeoperating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. c, capacitance (pf) v r , reverse voltage (volts) c ib 0.04 30 1 4 10 40 t c = 25 c 200 10 50 70 100 0.1 2 6 20 20 pnp npn 0.6 0.4 0.2 0.06 figure 6. capacitance c ob
mjd112 mjd117 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i c , collector current (amp) npn mjd112 pnp mjd117 figure 7. dc current gain figure 8. collector saturation region figure 9. aon voltages 0.04 i c , collector current (amp) 300 0.06 0.2 2 k 800 4 k h fe , dc current gain v ce = 3 v t j = 125 c 3 k 0.1 0.6 25 c -55 c 1 k 0.4 1 6 k 400 600 2 4 0.04 300 0.06 0.2 2 k 800 4 k h fe , dc current gain 3 k 0.1 0.6 25 c -55 c 1 k 0.4 1 6 k 400 600 24 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 i c = 0.5 a 1 a 1 3 1 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 3 v v ce(sat) @ i c /i b = 250 0.06 0.2 2 0.1 0.6 0.4 1 4 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 0.06 0.2 2 0.1 0.6 0.4 1 4 20 50 100 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 1 3 1 20 50 100 v be @ v ce = 3 v t c = 125 c v ce = 3 v 4 a t j = 125 c 2 a t j = 125 c i c = 0.5 a 1 a 4 a 2 a typical electrical characteristics
mjd112 mjd117 http://onsemi.com 6 npn mjd112 pnp mjd117 0.04 i c , collector current (amp) 0.06 0.2 0 *applied for i c /i b < h fe /3 0.1 0.6 -55 c to 25 c 0.4 1 -4.8 24 10 4 v be , base-emitter voltage (volts) 10 -1 0 -0.4 , collector current (a) m i c 10 3 10 2 10 1 10 0 +0.2 +0.4 +0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -0.6 -0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base-emitter voltage (volts) 10 -1 0 +0.4 , collector current (a) m i c 10 3 10 2 10 1 10 0 -0.2 -0.4 -0.6 10 5 +0.6 +0.2 -0.8 -1 -1.2 -1.4 +0.8 -4 -3.2 -2.4 -1.6 -0.8 q vc for v be 25 c to 150 c 25 c to 150 c * q vc for v ce(sat) 0.04 i c , collector current (amp) 0.06 0.2 0.1 0.6 0.4 1 2 4 figure 10. temperature coefficients figure 11. collector cutoff region figure 12. darlington schematic base emitter collector 8 k 120 pnp base emitter collector 8 k 120 npn 0 -4.8 +0.8 -4 -3.2 -2.4 -1.6 -0.8 v , temperature coefficients (mv/ c) q v , temperature coefficients (mv/ c) q -55 c to 25 c *applies for i c /i b < h fe /3 * q vc for v ce(sat) q vb for v be 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 30 v reverse forward t j = 150 c 100 c 25 c
mjd112 mjd117 http://onsemi.com 7 package dimensions case 36907 issue m dpak notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd112 mjd117 http://onsemi.com 8 package dimensions case 369a13 issue aa dpak d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd112/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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